| 摘要 |
PURPOSE: A semiconductor device is provided to improve the quality of films formed on a semiconductor substrate, such as contact and silicide layers that connect the silicon substrate to wiring, a silicon nitride film or the like, by having the semiconductor substrate irradiated with a large number of photons in a short time. CONSTITUTION: In forming a miniaturized fine contact, a TiN film(109) is formed inside the contact hole into which contact wiring such as a W film(108) is to be filled, and while heating at 600°C or lower, heat treatment is carried out, by irradiating the film with a light having a main emission wavelength shorter than the optical absorption edge, in a short time of 10 msec or shorter. A reaction between the TiN film and the interface of a silicon substrate(100) occurs, resulting in the reduction of the natural oxide film. Because of the short-time heat treatment, impurity density profile in the diffused layer is not disturbed. Also a SiN film on a polysilicon gate is irradiated at least once with a white light, having a wavelength of 200 nm or longer for 10 msec or shorter with an energy of 10-100 J/cm¬2. Wing this heat treatment, contained hydrogen is removed, and boron punch through is avoided, preventing degradation of the element. |
