发明名称 |
Production of semiconductor integrated circuit |
摘要 |
A semiconductor integrated circuit in which the storage capacitor has an increased capacitance and a decreased leakage current. The storage capacitor is formed by the steps of: forming a polysilicon bottom electrode having semispherical silicon crystals formed thereon; performing plasma nitriding on the surface of said bottom electrode at a temperature lower than 550° C., thereby forming a film of silicon nitride having a film thickness smaller than 1.5 nm; and depositing a film of amorphous tantalum pentoxide and then crystallizing said amorphous tantalum pentoxide. The silicon nitride film has improved resistance to oxidation and also has a reduced leakage current. As a result, the polysilicon bottom electrode becomes resistant to oxidation and the storage capacitor increases in capacitance and decreases in leakage current.
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申请公布号 |
US2002043679(A1) |
申请公布日期 |
2002.04.18 |
申请号 |
US20010877207 |
申请日期 |
2001.06.11 |
申请人 |
MIKI HIROSHI;SHIMAMOTO YASUHIRO;HIRATANI MASAHIKO;HAMADA TOMOYUKI |
发明人 |
MIKI HIROSHI;SHIMAMOTO YASUHIRO;HIRATANI MASAHIKO;HAMADA TOMOYUKI |
分类号 |
H01L21/8242;H01L21/02;H01L21/314;H01L27/108;(IPC1-7):H01L31/119 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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