| 摘要 |
The present invention provides for a method of manufacturing a Group III-V compound semiconductor, which grows a nitrogen-contained Group III-V compound semiconductor of the p-type conductivity, without performing any particular post-processing after growing the compound semiconductor, and which prevents a deterioration in the yield of manufacturing light emitting elements due to post-processing. [1] A method of manufacturing a Group III-V compound semiconductor which contains p-type impurities and which is expressed by a general formula InxGayAlzN (0>=x>=1,0>=z>=1, x+y+z=1), by thermal decomposition vapor phase method using metalorganics, the method being characterized in that carrier gas is inert gas in which the concentration of hydrogen is 0.5 % or smaller in capacity. [2] A method of manufacturing a Group III-V compound semiconductor which contains p-type impurities and which is expressed by a general formula InxGayAlzN (0>=x>=1, 0>=y>=1,0>=1, x+y+z=1), by thermal decomposition vapor phase method using metalorganics, the method being characterized in that after etching within a reaction furnace using at least one compound which is selected from a compound group consisting of compounds of halogenated hydrogen, compounds of halogen and Group V elements and compounds of halogen, hydrogen and Group V elements, inert gas in which the concentration of hydrogen is 0.5% or smaller in capacity is used as carrier gas.
|
