DEEP GRAYSCALE ETCHING OF SILICON

摘要

Curved structures are etched into silicon suitable for utilization in meso-machines. The curved structures are obtained by patterning photoresist using gray scale technology, followed by an ICP-machining process of alternating sequential etching and polymerization steps. The curved structures can also be obtain using a two step etching process where the gray scale patterned photoresist is first etched using reactive ion etching (RIE), followed by ICP machining by alternating sequential etching and polymerization steps.