| 发明名称 |
Method of depositing tungsten nitride using a source gas comprising silicon |
| 摘要 |
A method for depositing tungsten nitride uses a source gas mixture having a silicon based gas for depositing the tungsten nitride to overlie a deposition substrate. A non-planar storage capacitor has a tungsten nitride capacitor electrode.
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| 申请公布号 |
US2002045322(A1) |
申请公布日期 |
2002.04.18 |
| 申请号 |
US20010004714 |
申请日期 |
2001.12.05 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MEIKLE SCOTT;DOAN TRUNG |
| 分类号 |
C23C16/34;C23C16/46;H01L21/02;H01L21/28;H01L21/285;H01L21/768;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;(IPC1-7):H01L21/20 |
主分类号 |
C23C16/34 |
| 代理机构 |
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代理人 |
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