Method of fabricating a semiconductor device using a damascene metal gate

摘要

A method of fabricating a semiconductor device using a damascene metal gate including the steps of forming a damascene gate oxide layer and a damascene gate electrode on a semiconductor substrate, forming a trench at an upper part of the damascene gate electrode by selectively etching a portion of the damascene gate electrode to a predetermined thickness, forming an insulating layer in the trench on the damascene gate electrode, forming an insulating interlayer on an upper surface of the entire structure, and forming a contact hole exposing a portion of the semiconductor substrate by selectively etching the insulating interlayer.