| 摘要 |
<p>A transistor has a source electrode and a drain electrode which are strip-shaped located with a predetermined space on a semiconductor layer flatly superposed on a gate electrode. The source electrode has a recess for receiving the tip of the drain electrode. The semiconductor layer has a sticking-out part that sticks out of the gate electrode to superpose not on the gate electrode, but on the source electrode or the drain electrode. Thus, the sticking-out part superposed on the source electrode and that superposed on the drain electrode are shielded by the gate electrode and become independent of each other. A semiconductor island sticking out of the gate electrode turned conductive by the photoelectric conversion action due to light or the like non-intercepted by the gate electrode, so that the source and the drain are prevented from being short-circuited.</p> |
