发明名称 Test circuit for boost circuit output node potential measurement of a semiconductor ic device
摘要 A test circuit for a semiconductor IC device for measuring a potential at an output node of a boost circuit included in the semiconductor IC device includes a switch having an end connected to the output node; a potential measurement terminal; and an n-channel MOS transistor including a gate connected to another end of the switch, a source connected to a reference voltage supply, and a drain connected to the potential measurement terminal. <IMAGE>
申请公布号 EP1024500(A3) 申请公布日期 2002.04.17
申请号 EP19990310528 申请日期 1999.12.23
申请人 SHARP KABUSHIKI KAISHA 发明人 KAWAI, KEN
分类号 G11C17/00;G01R31/28;G11C29/02;G11C29/12;G11C29/50 主分类号 G11C17/00
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