METHOD FOR DRY-ETCHING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for dry-etching a semiconductor device is provided to minimize particles generated on a wafer where an etch process is performed, by making radio frequency(RF) power not turn off until a dry etch process is completed. CONSTITUTION: A semiconductor wafer having a multilayer is transferred to an etch chamber. A predetermined portion of an uppermost layer of the multilayer is etched to form an opening. A stabilization process is performed regarding a chamber while RF power is applied to the etch chamber. A lower layer exposed to a lower portion by the opening is over-etched.