发明名称 |
Process for preparing semiconductor substrate |
摘要 |
<p>A process for preparing a semiconductor substrate comprises a step of making a silicon substrate porous, a step of forming a non-porous silicon monocrystalline layer on the resulting porous substrate, a step of bonding the surface of the non-porous silicon monocrystalline layer to another substrate having a metallic surface, and a step of removing the porous silicon layer of the bonded substrates by selective etching.</p> |
申请公布号 |
EP0553853(B1) |
申请公布日期 |
2002.04.17 |
申请号 |
EP19930101414 |
申请日期 |
1993.01.29 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KONDO, SHIGEKI;MATSUMOTO, SHIGEYUKI;ISHIZAKI, AKIRA;INOUE, SHUNSUKE;NAKAMURA, YOSHIO |
分类号 |
H01L21/02;H01L21/762;H01L21/768;H01L27/12;H01L31/18;(IPC1-7):H01L21/20;H01L21/76 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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