发明名称 Process for preparing semiconductor substrate
摘要 <p>A process for preparing a semiconductor substrate comprises a step of making a silicon substrate porous, a step of forming a non-porous silicon monocrystalline layer on the resulting porous substrate, a step of bonding the surface of the non-porous silicon monocrystalline layer to another substrate having a metallic surface, and a step of removing the porous silicon layer of the bonded substrates by selective etching.</p>
申请公布号 EP0553853(B1) 申请公布日期 2002.04.17
申请号 EP19930101414 申请日期 1993.01.29
申请人 CANON KABUSHIKI KAISHA 发明人 KONDO, SHIGEKI;MATSUMOTO, SHIGEYUKI;ISHIZAKI, AKIRA;INOUE, SHUNSUKE;NAKAMURA, YOSHIO
分类号 H01L21/02;H01L21/762;H01L21/768;H01L27/12;H01L31/18;(IPC1-7):H01L21/20;H01L21/76 主分类号 H01L21/02
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