METHOD FOR FABRICATING JUNCTION PART OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a junction part of a semiconductor device is provided to maximize activation of impurity ions by increasing a possibility that the impurity ions return to their positions. CONSTITUTION: The first impurity ion implantation process is performed regarding a semiconductor substrate(201) wherein a spacer(206) is formed on the sidewall of a gate electrode so that an amorphous layer is formed. The second impurity ion implantation process is performed to form the junction part(208) on the semiconductor substrate. The first heat treatment process is performed to grow the amorphous layer of a solid type. The second heat treatment process of which the temperature is increased is performed to activate the junction part.