APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

An epitaxial growth device (1) is provided with a processing chamber (2) having a gas supply port (3) through which reactive gas (Go) is supplied and a gas exhaust port (4) for discharging exhaust gas (Gh) generated by the processing. An exhaust piping (8) for discharging exhaust gas (Gh) to an exhaust gas processing device (7) is connected with exhaust port (4) of this processing chamber (2). Locations in this exhaust piping (8) that make contact with the exhaust gas (Gh) are covered with a coating film (C) containing polyimide or Teflon. In this way, corrosion of the inside face etc of exhaust piping (8) can be prevented. <IMAGE>