| 摘要 |
PURPOSE: A method of fabricating an array panel for an LCD device is provided to form the length of a neck-shaped Mo-bridge as micro meters, and to easily cut lower Al metal distances of the neck-shaped Mo-bridge of each shorting line, to increase shear strength of the Mo-bridge, so as to reduce the number of wire-breaking times of the shorting lines in an unwanted step. CONSTITUTION: An Al metal and the first Mo metal are accumulated on a substrate(101) as thin films. By etching the accumulated metal layers, a gate line including a gate electrode and a gate shorting line are formed. By etching the first Mo metal of an upper part comprising the gate shorting line, a neck-shaped Mo-bridge is formed having 3.5 to 4.5 micro meters in length. A lower Al metal of the Mo-bridge is etched to be separated. A gate insulating layer(175) is deposited on the substrate(101), and a semiconductor layer(180) and a contact layer are formed on the substrate(101). The deposited gate insulating layer(175) is removed. The second Mo metal layer is accumulated on the substrate(101) where the gate insulating layer(175) is removed. By etching the second Mo metal layer, a source electrode(195) and a drain electrode(196) are formed. The second Mo metal layer and the Mo-bridge are removed. The second insulating layer is deposited on the substrate(101) having the source and the drain electrodes(195, 196).
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