Verfahren zur Herstellung einer monolithischen Struktur mit einem Perovskit-Kondensator

摘要

A method for the fabrication of a high capacity capacitor consists of: (a) coating a silicon substrate with a first insulating layer (6); (b) forming and engraving successively onto the substrate a first electrode (10), a dielectric in a ferro-electric material with a high constant dielectric (11) and a second electrode (12); (c) coating the structure with a second insulating layer (14) to encapsulate the structure of the capacitor; (d) producing some contact openings towards the semiconducting zones and towards the first electrode; (e) depositing and engraving a first conducting layer (21-25); (f) depositing a third protective insulating layer (30); (g) depositing a second conducting layer (31); (h) establishing in particular a contact with the upper electrode of the component; (i) depositing a final passivation layer (33). The ferro-electric dielectric is a perovskite.