Method of fabricating a III-V compound semiconductor device with an Aluminium-compound layer

摘要

Disclosed is a method of fabricating a compound semiconductor device, which has an Al-based compound semiconductor layer and is suitable for producing, for example, a semiconductor laser device with a buried structure. The method comprises a first step of sequentially performing vapor growth of a plurality of compound semiconductor layers including an Al-based compound semiconductor layer formed on a semiconductor substrate by using a metalorganic chemical vapor deposition (MOCVD), thereby forming a semiconductor multilayer (epitaxial layer) having, for example, a double heterostructure; a second step of selectively etching a specific compound semiconductor layer in the semiconductor multilayer other than the Al-based compound semiconductor layer in the MOCVD using a bromine-based gas, thereby forming a mesa; and a third step of regrowing a predetermined compound semiconductor layer on the semiconductor multilayer in the MOCVD following the etching step.