发明名称 Method of fabricating and/or repairing a light emitting device
摘要 <p>A method of repairing a light emitting device which makes high quality image display possible even if a pin hole is formed during formation of an EL layer is provided. The method of repairing a light emitting device is characterized in that a reverse bias voltage is applied to an EL element at given time intervals to thereby reduce a current flowing into an EL element when the reverse bias voltage is applied to the EL element.</p>
申请公布号 EP1198017(A2) 申请公布日期 2002.04.17
申请号 EP20010124132 申请日期 2001.10.10
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI;ARAI, YASUYUKI;OSADA, MAI
分类号 H05B33/10;G09G3/32;H01L51/00;H01L51/30;H01L51/52;(IPC1-7):H01L51/20 主分类号 H05B33/10
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