发明名称 |
Method of fabricating and/or repairing a light emitting device |
摘要 |
<p>A method of repairing a light emitting device which makes high quality image display possible even if a pin hole is formed during formation of an EL layer is provided. The method of repairing a light emitting device is characterized in that a reverse bias voltage is applied to an EL element at given time intervals to thereby reduce a current flowing into an EL element when the reverse bias voltage is applied to the EL element.</p> |
申请公布号 |
EP1198017(A2) |
申请公布日期 |
2002.04.17 |
申请号 |
EP20010124132 |
申请日期 |
2001.10.10 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;ARAI, YASUYUKI;OSADA, MAI |
分类号 |
H05B33/10;G09G3/32;H01L51/00;H01L51/30;H01L51/52;(IPC1-7):H01L51/20 |
主分类号 |
H05B33/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|