| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to maximize capacitance, by performing a heat treatment process to form a hemispherical crystalline lower electrode so that the surface area of the lower electrode is maximized. CONSTITUTION: A lower electrode seed layer(3a) is formed by using Ru or Ir, and the first heat treatment process is performed. A lower electrode metal layer(3b) is formed on the lower electrode seed layer by using Ru or Ir. The second heat treatment process is performed regarding the lower electrode metal in a NH3 gas atmosphere to form the hemispherical crystalline lower electrode. After a dielectric layer(4) is formed on the lower electrode, the third heat treatment process is performed. After an upper electrode(5) is formed on the dielectric layer, the fourth heat treatment process is performed.
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