METHOD FOR FABRICATING PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a pattern of a semiconductor device is provided to prevent a defect caused by an electrical connection even when the interval between patterns is very narrow, by making a hard mask etched to have the sidewall of a vertical type and by preventing a loss of a photoresist layer so that the conductive layer pattern have an excellent type. CONSTITUTION: After the hard mask(4) is formed on the conductive layer(3) while the conductive layer is formed on a semiconductor substrate(1), a photoresist layer pattern is formed on the hard mask. The hard mask in an exposed portion is etched by using the photoresist layer pattern as a mask, and a polymer layer is formed on the photoresist layer pattern. After the exposed portion of the conductive layer is etched to form a conductive layer pattern, the remaining polymer layer and photoresist layer pattern are sequentially eliminated.