发明名称 |
COMPOUND SEMICONDUCTOR DEVICE |
摘要 |
<p>PURPOSE: Compound semiconductor devices for use at frequencies of about 2.4 GHz and higher is provided to have a significantly smaller chip size than conventional devices while maintaining low insertion loss and high isolation. CONSTITUTION: A compound semiconductor device comprises a substrate made of a compound semiconductor; a connecting pad which is formed directly on the substrate and is used for connecting to a bonding wire; and an activated impurity region which is formed underneath the connecting pad and prevents a depletion layer from expanding beyond the impurity region.</p> |
申请公布号 |
KR20020028827(A) |
申请公布日期 |
2002.04.17 |
申请号 |
KR20010062341 |
申请日期 |
2001.10.10 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
ASANO TETSURO;HIRAI TOSHIKAZU |
分类号 |
H01L21/338;H01L27/095;H01L29/80;H01L29/812;(IPC1-7):H01L29/80 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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