发明名称 COMPOUND SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE: Compound semiconductor devices for use at frequencies of about 2.4 GHz and higher is provided to have a significantly smaller chip size than conventional devices while maintaining low insertion loss and high isolation. CONSTITUTION: A compound semiconductor device comprises a substrate made of a compound semiconductor; a connecting pad which is formed directly on the substrate and is used for connecting to a bonding wire; and an activated impurity region which is formed underneath the connecting pad and prevents a depletion layer from expanding beyond the impurity region.</p>
申请公布号 KR20020028827(A) 申请公布日期 2002.04.17
申请号 KR20010062341 申请日期 2001.10.10
申请人 SANYO ELECTRIC CO., LTD. 发明人 ASANO TETSURO;HIRAI TOSHIKAZU
分类号 H01L21/338;H01L27/095;H01L29/80;H01L29/812;(IPC1-7):H01L29/80 主分类号 H01L21/338
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