发明名称 SAMPLE AND VAPOR SOURCE FOR MOLECULAR BEAM EPITAXY
摘要 PROBLEM TO BE SOLVED: To provide a sample and a vapor source for molecular beam epitaxy which can vaporize a high melting material at a higher vaporization rate without varying the vaporization amount during the period when the sample is used, and further, to provide a sample and a vapor source for molecular epitaxy which generates a uniform vaporization rate in the sample face. SOLUTION: The vapor source is composed of a crucible filled with a plate type solid sample and a planar heat generator to heat the crucible. The planar heat generator consists of a resistor formed on the bottom face of the crucible. Recesses and projections are formed on the surface in the substrate side of the plate type solid sample.
申请公布号 JP2002114595(A) 申请公布日期 2002.04.16
申请号 JP20000302430 申请日期 2000.10.02
申请人 ANELVA CORP 发明人 KAMIYA YASUSHI;MORIZAKI HITOSHI
分类号 G01N1/28;B01J19/00;C30B23/08;C30B29/42;H01L21/203;(IPC1-7):C30B23/08 主分类号 G01N1/28
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