发明名称 |
SAMPLE AND VAPOR SOURCE FOR MOLECULAR BEAM EPITAXY |
摘要 |
PROBLEM TO BE SOLVED: To provide a sample and a vapor source for molecular beam epitaxy which can vaporize a high melting material at a higher vaporization rate without varying the vaporization amount during the period when the sample is used, and further, to provide a sample and a vapor source for molecular epitaxy which generates a uniform vaporization rate in the sample face. SOLUTION: The vapor source is composed of a crucible filled with a plate type solid sample and a planar heat generator to heat the crucible. The planar heat generator consists of a resistor formed on the bottom face of the crucible. Recesses and projections are formed on the surface in the substrate side of the plate type solid sample.
|
申请公布号 |
JP2002114595(A) |
申请公布日期 |
2002.04.16 |
申请号 |
JP20000302430 |
申请日期 |
2000.10.02 |
申请人 |
ANELVA CORP |
发明人 |
KAMIYA YASUSHI;MORIZAKI HITOSHI |
分类号 |
G01N1/28;B01J19/00;C30B23/08;C30B29/42;H01L21/203;(IPC1-7):C30B23/08 |
主分类号 |
G01N1/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|