发明名称 Method and arrangement for characterization of focused-ion-beam insulator deposition
摘要 According to one aspect of the disclosure and a particular example application directed to a flip-chip packaged die, a method for acquiring a signal from a target node in the circuit side includes removing substrate via the back side of the die to form an access area over the target node. A material is deposited in the access area over the target node in such a way to form simultaneously a conductive core and an immediately adjacent insulator. The conductive core is then used to couple a test signal between the target node and the conductive core. Other aspects of the disclosure include using a focused ion-beam system to provide varying concentrations of Gallium in forming simultaneously the conductive core and the immediately adjacent insulator. These aspects significantly lessen integrated circuit analysis and testing procedures.
申请公布号 US6372627(B1) 申请公布日期 2002.04.16
申请号 US19990383790 申请日期 1999.08.26
申请人 ADVANCED MICRO DEVICES, INC. 发明人 RING ROSALINDA M.;LI SUSAN;GILFEATHER GLEN
分类号 G01R31/28;G01R31/311;(IPC1-7):H01L21/746 主分类号 G01R31/28
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