发明名称 |
Method and arrangement for characterization of focused-ion-beam insulator deposition |
摘要 |
According to one aspect of the disclosure and a particular example application directed to a flip-chip packaged die, a method for acquiring a signal from a target node in the circuit side includes removing substrate via the back side of the die to form an access area over the target node. A material is deposited in the access area over the target node in such a way to form simultaneously a conductive core and an immediately adjacent insulator. The conductive core is then used to couple a test signal between the target node and the conductive core. Other aspects of the disclosure include using a focused ion-beam system to provide varying concentrations of Gallium in forming simultaneously the conductive core and the immediately adjacent insulator. These aspects significantly lessen integrated circuit analysis and testing procedures.
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申请公布号 |
US6372627(B1) |
申请公布日期 |
2002.04.16 |
申请号 |
US19990383790 |
申请日期 |
1999.08.26 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
RING ROSALINDA M.;LI SUSAN;GILFEATHER GLEN |
分类号 |
G01R31/28;G01R31/311;(IPC1-7):H01L21/746 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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