发明名称 |
Integrated capacitor on the back of a chip |
摘要 |
A semiconductor device is disclosed. The device includes an integrated circuit chip having integral de-coupling capacitors on the chip backside. The de-coupling capacitors includes a metal layer in intimate contact with the semiconductor substrate of the integrated circuit, a dielectric layer and a second metal layer. The second metal layer is segmented to form multiple capacitors, and each capacitor is interconnected to power supplies of the chip. Interconnection to different integrated circuit packages is provided. A method of making the semiconductor device is also disclosed.
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申请公布号 |
US6373127(B1) |
申请公布日期 |
2002.04.16 |
申请号 |
US19990398884 |
申请日期 |
1999.09.20 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BAUDOUIN DANIEL;HYSLOP ADIN;NISHIMURA AKITOSHI;JANZEN JEFFREY;KRESSLEY MARK |
分类号 |
H01L23/495;(IPC1-7):H01L23/495 |
主分类号 |
H01L23/495 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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