| 发明名称 |
Semiconductor integrated circuit device and method for production of the same |
| 摘要 |
A pattern of more than one conductive layer overlying a fuse formed in a TEG region is subject to OR processing; further, a combined or "synthetic" pattern with an opening pattern of one or more testing pads connected to said fuse added thereto is copied by transfer printing techniques to a photosensitive resin layer that is coated on the surface of a semiconductor wafer, thereby forcing the resin layer to reside only in a selected area of a scribe region, to which area the synthetic pattern has been transferred.
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| 申请公布号 |
US6372554(B1) |
申请公布日期 |
2002.04.16 |
| 申请号 |
US19990390682 |
申请日期 |
1999.09.07 |
| 申请人 |
HITACHI, LTD.;HITACHI ULSI SYSTEMS CO., LTD. |
发明人 |
KAWAKITA KEIZO;KAJIGAYA KAZUHIKO;NARUI SEIJI;NAKAI KIYOSHI;SUZUKI KAZUNARI;TSUGANE HIDEAKI;SATO FUMIYOSHI |
| 分类号 |
H01L21/82;H01L21/02;H01L21/8242;H01L23/525;H01L27/00;H01L27/10;H01L27/108;(IPC1-7):H01L21/82 |
主分类号 |
H01L21/82 |
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