| 摘要 |
A workpiece and method are provided for forming N polysilicon interconnects coupled to N contact openings in a semiconductor device. The workpiece includes an active area and N potential contact openings covered with a dielectric layer, a first through hole etched in the dielectric layer to expose substantially all of the workpiece corresponding to the active area to thereby expose the N contact openings, a monolithic polysilicon plug deposited in the first through hole, and N-1 second through holes etched in the polysilicon plug and disposed between the N contact openings to thereby divide the polysilicon plug into the N polysilicon interconnects, where N is an integer greater than or equal to 2. According to one aspect of the invention, the workpiece includes N-1 conductors traversing the active area, the N contact openings are disposed adjacent to the N-1 conductors, and each of the N contact openings is separated from the other contact openings by one of the N-1 conductors.
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