| 摘要 |
A substrate is provided, and a first dielectric layer is formed, thereon. Then a first photoresist layer is formed and defined on the first dielectric layer. Next, a dense region as an etched barrier layer is formed in the first dielectric layer by an ion implantation with photoresist layer as a mask. A second dielectric layer is formed on the first dielectric layer after the first photoresist layer is removed. Afterward forming a second photoresist layer on the second dielectric layer and defining a predetermined trench region to expose a partial surface of the second dielectric layer, wherein the partial surface of the second dielectric layer comprises the dense region. Subsequently, an etching process is performed by means of the second photoresist layer as an etched mask to etch through the second dielectric layer and the first dielectric layer until the substrate surface is exposed for patterning the dual damascene.
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