发明名称 Method and apparatus for forming SiC thin film on high polymer base material by plasma CVD
摘要 A high quality transparent SiC thin film can be deposited on the surface of a plastic material at low temperature utilizing Electron Cyclotron Resonance (ECR) Plasma CVD techniques, thereby enhancing surfacial hardness without spoiling designability. A magnetic field is applied to a plasma generating chamber by means of a surrounding magnetic coil. Microwaves are then introduced into the plasma generating chamber. Further, an upstream gas is introduced into the plasma generating chamber. ECR plasma is thus generated. A downstream gas is then supplied to the chamber from an inlet. Furthermore, the ECR plasma is passed through a mesh placed between the inlet and a polymer base material or between the plasma generating chamber and the inlet. Accordingly, a SiC film is deposited on a surface of a polymer base material.
申请公布号 US6372304(B1) 申请公布日期 2002.04.16
申请号 US19970888954 申请日期 1997.07.07
申请人 SUZUKI MOTOR CORPORATION 发明人 SANO KEIICHIRO;NOMURA MASAYA;TAMAMAKI HIROAKI;HATANAKA YOSHINORI
分类号 C08J7/00;C08J7/06;C08J7/18;C23C16/32;C23C16/511;(IPC1-7):C23C16/32 主分类号 C08J7/00
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