| 摘要 |
There is provided a method of fabricating a semiconductor device, including the steps of (a) generating plasma in the following conditions: (a1) an RF bias voltage has a frequency equal to or greater than 1 MHz, (a2) an RF source voltage has a frequency equal to or greater than 1 MHz, (a3) the RF source voltage is modulated by pulses in a cycle equal to or greater than 100 musec, and (a4) pulse-on time is equal to or greater than 50 musec, and (b) patterning multi-layered metal wirings by etching through the plasma The method makes it possible to reduce charging damage to a gate insulating film, even if wirings are further spaced away from adjacent ones and/or an antenna ratio of multi-layered metal wirings is further increased.
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