II-VI semiconductor component having at least one junction between a layer containing Se and a layer containing BeTe, and process for producing the junction

摘要

The invention relates to a II-VI semiconductor component in which, within a series of layers, there is provided at least one junction between a semiconductor layer containing BeTe and a semiconductor layer containing Se. A boundary layer between the semiconductor layer containing BeTe and the semiconductor layer containing Se is prepared in such a way that it forms a Be-Se configuration.