发明名称 |
Method for trimming a photoresist pattern line for memory gate etching |
摘要 |
Memory gate stacks having widths of about 0.18 microns to 0.15 microns are formed by trimming a resist mask pattern, having line widths of about 0.25 microns, to a width of about 0.20 microns. An antireflective coating layer such as silicon oxynitride underlying the resist pattern is then etched to form etched silicon oxynitride pattern lines having widths of about 0.18 to 0.15 microns. The etched silicon oxynitride layer is then used for self-aligned etching of underlying layers to form the memory gate stack. Hence, a memory gate can be formed that has a width substantially less than the current photolithography limit during formation of the resist mask pattern.
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申请公布号 |
US6372651(B1) |
申请公布日期 |
2002.04.16 |
申请号 |
US19990286464 |
申请日期 |
1999.04.06 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YANG WENGE;SHEN LEWIS |
分类号 |
H01L21/027;H01L21/033;H01L21/28;H01L21/3065;H01L27/115;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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