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发明名称
METHOD FOR FORMING HIGH-DENSITY HIGH-CAPACITY CAPACITOR
摘要
申请公布号
SG87922(A1)
申请公布日期
2002.04.16
申请号
SG20010001496
申请日期
2001.03.13
申请人
CHARTERED SEMICONDUCTOR MANUFACTURING, LTD
发明人
JIE YU;YALEHANKA RAMACHANDRAMURTHY PRADEEP;HENRY GERUNG;JUN QIAN
分类号
H01L21/02;(IPC1-7):H01L21/824
主分类号
H01L21/02
代理机构
代理人
主权项
地址
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