| 摘要 |
PROBLEM TO BE SOLVED: To provide a hexagonal boron nitride plate which has excellent machinability, thermal impact resistance, electrical insulatability, low dielectric properties and low dielectric loss properties and is >=150 W/m.K in the thermal conductivity in a thickness direction and a substrate for semiconductors using the same. SOLUTION: The hexagonal boron nitride plate is characterized in that the thermal conductivity in the thickness direction is >=150 W/m.K, the density is >=1.8 g/cm3 and the peak intensity ratio I(002)/I(100) of the (002) diffracted ray and (100) diffracted ray in X-ray diffraction measurement obtained by making incident X-ray in such a manner that the incident X-ray and the diffracted X-ray are made symmetrical with the normal of the plate plane is <=4.0. The substrate for semiconductors consists of such hexagonal boron nitride plate. The method for manufacturing the hexagonal boron nitride plate is also provided. |
