发明名称 |
Silicon-starved nitride spacer deposition |
摘要 |
Bridging between a metal silicide e.g., nickel silicide, layer on a gate electrode and metal silicide layers on associated source/drain regions is avoided by forming silicon-starved silicon nitride sidewall spacers having substantially no or significantly reduced Si available for reaction with deposited metal, e.g., nickel.
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申请公布号 |
US6372673(B1) |
申请公布日期 |
2002.04.16 |
申请号 |
US20010781256 |
申请日期 |
2001.02.13 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BESSER PAUL R.;NGO MINH VAN;WOO CHRISTY MEI-CHU;KLUTH GEORGE JONATHAN |
分类号 |
H01L21/318;H01L21/336;(IPC1-7):H01L21/318 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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