发明名称 |
Method for making raised source/drain regions using laser |
摘要 |
A low thermal budget method for making raised source/drain regions in a semiconductor device includes covering a silicon substrate and gate stacks with an amorphous silicon film, and then melting the film using a laser to crystallize the silicon. Subsequent dopant activation and silicidization are undertaken to render a raised source/drain structure while minimizing the thermal budget of the process.
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申请公布号 |
US6372584(B1) |
申请公布日期 |
2002.04.16 |
申请号 |
US20000628382 |
申请日期 |
2000.08.01 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU BIN |
分类号 |
H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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