发明名称 |
Method of making a via filled dual damascene structure without middle stop layer |
摘要 |
An interconnect structure and method of forming the same in which a barrier diffusion layer/etch stop layer is deposited over a conductive layer. An inorganic low k dielectric material is deposited over the barrier diffusion layer/etch stop layer to form a first dielectric layer. The first dielectric layer is etched to form a via in the first dielectric layer. An organic low k dielectric material is deposited within the via and over the first dielectric layer to form a second dielectric layer over the via and the first dielectric layer. The re-filled via is simultaneously etched with the second dielectric layer in which a trench is formed. A portion of the trench is directly over the via. The re-opened via and the trench are filled with a conductive material.
|
申请公布号 |
US6372631(B1) |
申请公布日期 |
2002.04.16 |
申请号 |
US20010778061 |
申请日期 |
2001.02.07 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WANG FEI;OKADA LYNNE A.;SUBRAMANIAN RAMKUMAR;GABRIEL CALVIN T. |
分类号 |
H01L21/4763;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/4763 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|