| 摘要 |
A multi-level memory in which each storage cell stores multiple bits. The memory includes a plurality of storage words, a data line, a plurality of reference lines, and a read circuit. Each storage word includes a data memory cell and a plurality of reference memory cells. A stored charge determines a conductivity value measurable between the first and second terminals of each memory cell. The read circuit generates a digital value indicative of the value stored in the data memory cell of a storage word that is connected to the data and reference lines by comparing the conductivity of the data line with a continuous conductivity curve determined by the conductivities of the reference lines.
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