| 摘要 |
A semiconductor device including a trench element separation structure and adapted to a high degree of integration without having crystal defects produced in a semiconductor substrate, and a method of manufacturing the same. The semiconductor device includes a trench element separation region in a prescribed region of the semiconductor substrate, the wall of the semiconductor substrate which forms an inside surface of a trench is covered with a first insulation film, and a second insulation film and a third insulation film are filled inside the trench being stacked in layers in this order. Or, the semiconductor device includes a trench element separation structure in the prescribed region of the semiconductor substrate of one conduction type, the wall of the semiconductor substrate which forms an inside surface of a trench is covered with a first insulation film, and a second insulation film is filled inside the trench which is covered with the first insulation film, and a diffusion layer of a reverse conduction type is formed on the surface of the semiconductor substrate which forms the side surface of the upper region of the trench.
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