| 摘要 |
PROBLEM TO BE SOLVED: To provide a microstructure controlling body of an inorganic oxide with the skeletal structure of the inorganic oxide not forming grain boundaries and a bottleneck structure, a method for producing the microstructure controlling body, to prepare a thin inorganic oxide film comprising the microstructure controlling body, to provide a method for producing the thin inorganic oxide film and a semiconductor electrode using the thin inorganic oxide film. SOLUTION: A solution containing a sol obtained by hydrolyzing a metallic compound and an organic solvent is gelled and heated to produce the objective inorganic oxide microstructure controlling body. The metallic compound is an alkoxide or a complex of at least one metal selected from the group comprising titanium, zinc, tin, indium, zirconium, strontium, niobium, barium and vanadium. The solution contains a nonionic surfactant. |
