| 摘要 |
A method of depositing a dielectric film on a substrate, comprising depositing a silicon oxide layer on the substrate; and treating the dielectric layer with oxygen. A layer of FSG having a fluorine content of greater than 7%, as measured by peak height ratio, deposited by HDP CVD, is treated with an oxygen plasma. The oxygen treatment stabilizes the film. In an alternative embodiment of the invention a thin (<1000 Å thick) layer of material such as silicon nitride is deposited on a layer of FSG using a low-pressure strike. The low pressure strike can be achieved by establishing flows of the process gases such that the pressure in the chamber is between 5 and 100 millitorr, turning on a bias voltage for a period of time sufficient to establish a weak plasma, which may be capacitively coupled. After the weak plasma is established a source voltage is turned on and subsequently the bias voltage is turned off. Silicon nitride layers deposited using the low pressure strike exhibit good uniformity, strong adhesion, and inhibit outgassing from underlying layers.
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