Semiconductor device for simultaneously achieving high reliability to laser light radiation and small occupation region and method of manufacturing it

摘要

A semiconductor device includes a first semiconductor layer, a first well, a second semiconductor layer, a second well, an insulating layer, a fuse layer, and an insulating layer. The first well is formed in a surface of the first semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer. The second well is formed in the second semiconductor layer to be wider than the first well in a lateral direction. The insulating layer is formed on the second semiconductor layer. The fuse layer is formed on the insulating layer. The insulating layer is formed on the fuse layer such that a part of the fuse layer is exposed.