发明名称 |
Method for forming a trench type element isolation structure and trench type element isolation structure |
摘要 |
There is provided a method for forming a trench type element isolation structure wherein no recess develops in the edge part of an imbedded oxide film of a trench type element isolation.Thermal oxidation films having higher etching resistance than the CVD film are formed not only on the surroundings of the imbedded oxide film inside the groove formed on the silicon substrate but also on the lateral sides of the imbedded oxide film projecting upward from the silicon substrate surface.
|
申请公布号 |
US6372604(B1) |
申请公布日期 |
2002.04.16 |
申请号 |
US20010860505 |
申请日期 |
2001.05.21 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SAKAI MAIKO;KUROI TAKASHI;HORITA KATSUYUKI |
分类号 |
H01L21/76;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|