Physical vapor deposition device for forming a metallic layer on a semiconductor wafer

摘要

The present invention provides a physical vapor deposition device for forming a metallic layer with a predetermined thickness on a semiconductor wafer. The PVD device comprises a chamber, a wafer chuck installed at the bottom end of the chamber through which the semiconductor wafer is hold horizontally, a metallic ion generator for generating metallic ions, an electric field generator for forming a vertical electric field above the wafer chuck that guides the metallic ions toward the wafer chuck, and a magnetic field generator. The magnetic field generator generates a magnetic field perpendicular to the direction of movement of the metallic ions to create a horizontal moving force on the metallic ions thus causing the metallic ions to deposit on the semiconductor wafer at a slant angle.