| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can easily form an electrode having capacitive coupling and can realize a high breakdown voltage, and also to provide a method for fabricating the semiconductor device. SOLUTION: An n-type single crystal silicon substrate 1 is subjected on its one major surface to ion implanting and thermal diffusing processes to form a p-type impurity diffusion region 1a and an n-type high-concentration impurity diffusion region 1b, and after that, a silicon oxide film 2 and a silicon nitride film 3 are formed thereon. The silicon nitride film 3 is etched with use of a predetermined shape of pattern made of photoresist 4 as a mask to form projections 3a thereon, and then the photoresist 4 is removed. Next, a polysilicon layer 5 is formed as an electrode, the polysilicon layer 5 formed on top faces of the projections 3a is removed with use of photoresist 6 as a mask, and then the photoresist 6 is removed. Subsequently, a silicon oxide film 7 is formed, openings 8a to 8c are made therein with the photoresist as a mask and then the photoresist is removed. Finally, metallic wiring material 9 is filled into the openings 8a to 8c to form a metallic wiring pattern. |
