| 摘要 |
PROBLEM TO BE SOLVED: To selectively maintain acidic properties only in the unexposed part of a resist film and to enable a positive surface resolution process by using a specified polymer having a 1st group generating a base when irradiated with energy beams and a 2nd acidic group. SOLUTION: This pattern forming material is made of a polymer having a 1st group generating a base when irradiated with energy beams and a 2nd acidic group. This polymer is preferably a copolymer represented by the formula or a ter- or higher polymer obtd. by polymerizing the copolymer with other group. In the formula, R1 is H or alkyl, each of R2 and R3 is H or phenyl, R2 and R3 may form cycloalkyl, etc., by cyclization, R4 is H or alkyl, 0<x<1 and 0<y<1. |
