| 摘要 |
PROBLEM TO BE SOLVED: To suppress variation in a pair of transistors for improved circuit characteristics by, related to an MOSFET, arranging the longitudinal direction of a gate pattern in the direction orthogonal to the operating direction at scan stepper exposure, and placing a part of the gate pattern where a contact hole is arranged on a chip center-line side. SOLUTION: The longitudinal direction of each gate pattern 17 is arranged in the direction orthogonal to the operating direction at scan stepper exposure, and a part where a contact pattern 18 is arranged is put on a chip center-line side. Here, Tr1 and Tr2 are such MOSFET as functions, as a pair, in a circuit like, for example, NchMOSFET of a flip-flop, each gate and drain are connected to a complementary signal line 15. Here, since the contact pattern 18 is arranged on the chip center side of each gate pattern 17, the gate pattern is set wider at that part on a mask pattern, eliminating a thin gate pattern line width. |
