| 摘要 |
PURPOSE: A method for fabricating a TFT(Thin Film Transistor) substrate for LCD(Liquid Crystal Display) devices is provided to form pad units variously according to etching solution and etching conditions, and to form the pad units with chrome or AlNd single layer, so as to improve a contact characteristic. CONSTITUTION: Gate wires(21,22,23) including a gate pad(23) made of an aluminum AlNd layer(26) are formed on an insulating substrate(10). A gate insulating layer(30) is formed on the gate wires(21,22,23). A semiconductor layer(41) is formed on the gate insulating layer(30). Data wires(61,62,63,64) including a data pad(64) made of an aluminum AlNd layer(66) are formed on the semiconductor layer(41). A protective layer(70) having a first and a second contact holes(73,74) for exposing the gate pad(23) and the data pad(64) is formed. A pixel electrode(80) made of IZO(Indium Zinc Oxide) is formed. The pixel electrode(80) is formed using one of aluminum etching solution or chrome etching solution.
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