发明名称 HIGH DENSITY PACKAGE
摘要 PURPOSE: A high density package is provided to increase large capacity by installing several semiconductor chips in one package, and to improve an electrical characteristic by connecting the semiconductor chip with a substrate by a bump. CONSTITUTION: A substrate is of a quadrangular type. Several bumps(51) are formed on the upper surface of the substrate(60) at regular intervals in vertical and horizontal directions. The same number of electrical connection units as the bumps are disposed on the lower surface of the substrate at regular intervals in vertical and horizontal directions. A circuit pattern for connecting the bump with the electrical connection unit is formed inside the substrate. The frist insulation layer is vertically formed on the substrate. Bond pads are disposed on the first insulation layer. Metal patterns are disposed on the first insulation layer and are connected to respective bond pads so that the metal patterns extend to an edge. A semiconductor chip having the second insulation layer except the cross section of the metal pattern is attached to another semiconductor chip of which the lower surface has the same structure by using adhesive(40) as a medium so that several unit packages(50) are formed on the first insulation layer and the metal pattern. Encapsulant(90) encapsulates the upper surface of the substrate including the unit packages.
申请公布号 KR20020028017(A) 申请公布日期 2002.04.15
申请号 KR20000058888 申请日期 2000.10.06
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, SANG UK
分类号 H01L21/56;(IPC1-7):H01L21/56 主分类号 H01L21/56
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