| 摘要 |
PURPOSE: A method for inducing crystallization of metal in a phosphorous-doped amorphous layer is provided to improve crystallization of polycrystalline silicon and to minimize the quantity of metal left in a thin film, by using a metal induced crystallization method in which phosphorous ions and an electric field are applied. CONSTITUTION: An amorphous layer is formed on an insulation substrate(1). Phosphorous of 1x10¬11-10¬13 centimeter¬-2 on the average is doped to the amorphous layer. Metal of 5x10¬12-10¬14 centimeter¬-2 on the average is applied on the amorphous layer. The amorphous is heated and crystallized.
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