High voltage insulated-gate bipolar switch

摘要

An insulated-gate bipolar switch contains a number of trench-IGBT structures interdigitated with a number of floating mesas and trench gates to reduce inversion channel density. The IGBT mesa widths and the floating mesa widths are made different, which enables the switch to provide desired VFD, SCSOA and RBSOA values. The mesa widths and the number of floating mesas per unit cell are adjusted as needed to provide a switch having desired characteristics.