| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to reduce contact resistance between an upper electrode and a metal interconnection, by preventing the upper electrode from being over-etched while a bit line comes in contact with the metal interconnection. CONSTITUTION: The bit line(33) is formed in a predetermined region on a semiconductor substrate(31). A plurality of conductive plugs(35) penetrate the first oxide layer(34) and are electrically connected to the semiconductor substrate. A nitride layer(36) and the second oxide layer(37) are formed on the semiconductor substrate. A cylindrical lower electrode penetrate the second oxide layer and the nitride layer, and is electrically connected to each conductive plug. The second oxide layer is selectively removed to define a contact region. A dielectric layer(42) and an upper electrode(43) are sequentially formed on the lower electrode including the contact region. The third oxide layer(44) is formed on the semiconductor substrate. The third oxide layer, the second oxide layer, the nitride layer and the first oxide layer are selectively removed to form a contact hole so that a predetermined portion of the surface of the upper electrode and bit line in the contact region is exposed. A metal barrier layer(47) is interposed in the contact hole to form a tungsten plug(48). The metal interconnection(49) electrically connected to the tungsten plug is formed.
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