COPPER INTERCONNECTION FOR SEMICONDUCTOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A copper interconnection for a semiconductor is provided to prevent adhesion of a gold wire from being degraded and to attach the gold wire to the copper interconnection through a simple heat treatment process, by preventing diffusion of a copper oxide material extracted from a copper interconnection layer in a heat treatment for wire bonding. CONSTITUTION: A plurality of lower barrier layers(104) are separately formed on a semiconductor substrate(102). A plurality of copper interconnection layers(106) are respectively formed on the plurality of lower barrier layers. A plurality of metal-affinity diffusion barrier layers(108) are attached to corresponding gold wires through a wire bonding process, formed on the plurality of copper interconnection layers, respectively.